epub @ SUB HH

61.72.-y Defects and impurities in crystals; microstructure (for radiation induced defects, see 61.80.-x; for defects in surfaces, interfaces and thin films, see 68.35.Dv and 68.55.Ln; see also 85.40.Ry Impurity doping, diffusion and ion implantation technology) ( 0 Dok. )

• 61.72.Bb Theories and models of crystal defects ( 0 Dok. )
• 61.72.Cc Kinetics of defect formation and annealing ( 0 Dok. )
• 61.72.Dd Experimental determination of defects by diffraction and scattering ( 0 Dok. )
• 61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.) ( 0 Dok. )
• 61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.) ( 0 Dok. )
• 61.72.Ji Point defects (vacancies, interstitials, color centers, etc.) and ( 0 Dok. )
• 61.72.Lk Linear defects: dislocations, disclinations ( 0 Dok. )
• 61.72.Mm Grain and twin boundaries ( 0 Dok. )
• 61.72.Nn Stacking faults and other planar or extended defects ( 0 Dok. )
• 61.72.Qq Microscopic defects (voids, inclusions, etc.) ( 0 Dok. )
• 61.72.Ss Impurity concentration, distribution, and gradients (for impurities in thin films, see 68.55.Ln; see also 66.30.Jt ( 0 Dok. )
• 61.72.Tt Doping and impurity implantation in germanium and silicon ( 0 Dok. )
• 61.72.Vv Doping and impurity implantation in III-V and II-VI semiconductors ( 0 Dok. )
• 61.72.Ww Doping and impurity implantation in other materials ( 0 Dok. )
• 61.72.Yx Interaction between different crystal defects; gettering effect ( 0 Dok. )